UM6030
P/N MOS half-bridge three-phase output; maximum operating voltage of 40 V; compatible with 3.3 V / 5 V / 15 V input logic; dV/dt tolerance up to ±50 V/ns; P/NMOS |VGS| up to 10 V; built-in LDO of 5 V / 40 mA; over-temperature protection: gate drive voltage of 5–40 V; RoSH compliant; QFN16 Dead time: 130 ns Turn-on transmission delay: ton = 80 ns; turn-off transmission delay: toff = 30 ns; delay matching on both high and low sides Undervoltage lockout of 4.5 V positive threshold and 4.3 V negative threshold Sourcing current: 50 mA Sinking current: 300 mA Operating temperature: -40–125°C ESD: ±2 kV (HBM)| Part number | Pre_driver | Vs(V) | Voltage (V) | Input logic | IO+/IO-(A) | DT(ns) | IBD | 5V LDO | 12V LDO | Channel num | Package |
|---|---|---|---|---|---|---|---|---|---|---|---|
| UM6030 | 3P3N | 40 | 5-40 | HIN/LIN | +0.05A/-0.3A | 130 | / | √ | -- | 3 | QFN16 |